Test method for wavelength of peak photoluminescence and the corresponding composition of gallium arsenide phosphide wafers 磷化砷化鎵片的最大光致發(fā)光波長及其相應(yīng)成分的試驗方法
Preparation of samples of the constant composition region of epitaxial gallium arsenide phosphide for hall effect measurements 測量霍爾效應(yīng)用恒定成分范圍的外延磷化砷化鎵試樣的制備
Gallium arsenide phosphide (1-xx) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. It exists in various composition ratios indicated in its formula by the fraction x.